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Proceedings Paper

The influence of graded InxGa1-xAs on strain distribution and the band gap in the InAs/GaAs quantum dots
Author(s): Jia Wang; Qi Wang; Xin Guo; Xiaomin Ren; Xia Zhang; Yongqing Huang
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Paper Abstract

The effect of the graded InxGa1-xAs layer on the distribution of the strain was studied by calculating the strain of different models using the finite element method. The results demonstrate that the graded InxGa1-xAs layer can reduce the strain and thus lead to longer emission wavelength. The results also demonstrate that the graded InxGa1-xAs layer can increase strain in the GaAs capping layer which cause disadvantage to grow stacked InAs/GaAs QD structure. But the strain can be released though increase the thickness of spacer layer when grow stacked structure.

Paper Details

Date Published: 5 December 2011
PDF: 11 pages
Proc. SPIE 8198, 2011 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Integration, 81980K (5 December 2011); doi: 10.1117/12.921319
Show Author Affiliations
Jia Wang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Xin Guo, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Xia Zhang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8198:
2011 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Integration
Xuping Zhang; P. K. Alex Wai; Hai Ming, Editor(s)

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