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Proceedings Paper

VLS growth of GaAs/InGaAs/GaAs axial double-heterostructure nanowires
Author(s): Kun Zhou; Xia Zhang; Xin Yan; Xiaolong Lv; Junshuai Li; Xiaomin Ren; Yongqing Huang
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Paper Abstract

GaAs/InxGa1-xAs/GaAs double-heterostructure nanowires were grown by Metal-organic Chemical Vapor Deposition on GaAs (1 1 1)B substrate using the vapor-liquid-solid growth method. By tuning the In content(x) from 0.2 to 1, we fabricated several GaAs/InxGa1-xAs/GaAs nanowire heterostructrues with different InxGa1-xAs parts and studied their characteristics. We found that all the InGaAs segments were successfully grown on GaAs sections, while the InAs nanowires were grown kinked or downward. By inserting a composition-graded InxGa1-xAs buffer segment between GaAs and InAs nanowires, high yield of straight GaAs/InxGa1-xAs/GaAs nanowire heterostructrues were realized.

Paper Details

Date Published: 29 November 2011
PDF: 9 pages
Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020S (29 November 2011); doi: 10.1117/12.921312
Show Author Affiliations
Kun Zhou, Beijing Univ. of Posts and Telecommunications (China)
Xia Zhang, Beijing Univ. of Posts and Telecommunications (China)
Xin Yan, Beijing Univ. of Posts and Telecommunications (China)
Xiaolong Lv, Beijing Univ. of Posts and Telecommunications (China)
Junshuai Li, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8202:
2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology
Hoi Sing Kwok; Fengzhou Fang; Lian Xiang Yang; Chongxiu Yu; Albert A. Weckenmann; Yanbing Hou; Jinxue Wang; Ji Zhao; Jinxue Wang; Peter Zeppenfeld; Boyu Ding; Boyu Ding; Liquan Dong; Liquan Dong; Jack K. Luo; Boyu Ding; Liquan Dong; Jinxue Wang, Editor(s)

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