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Proceedings Paper

Behaviour of electron and hole currents in a 3-layer heterostructure OLET
Author(s): K. Jokinen; A. Bykov; R. Sliz; R. Myllyla
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Paper Abstract

The highest external quantum efficiency (EQE) of organic light emitting transistors (OLETs) to date has been achieved by using a 3-layer heterostructure configuration introduced by R. Capelli et al1. In this work, the behaviour of electron and hole currents in the 3-layer heterostructure OLET were investigated: the effect of the film properties of the dielectric and the active layers on the hole and electron currents were analysed. In the fabricated OLETs, electrons showed higher mobilities than holes. In contradiction, the 2-layer organic field effect transistor (OFET) consisting of two charge transporting layers with no light emitting layer indicated higher hole mobility. The results confirm that the light emitting layer significantly hinders the hole transport in the fabricated 3-layer heterostructure OLETs. Finally, the experimental results prove that reduced evaporation rate of the light emitting layer has a positive effect on the electron mobility within the device.

Paper Details

Date Published: 1 May 2012
PDF: 8 pages
Proc. SPIE 8435, Organic Photonics V, 84351L (1 May 2012); doi: 10.1117/12.921286
Show Author Affiliations
K. Jokinen, Univ. of Oulu (Finland)
A. Bykov, Univ. of Oulu (Finland)
R. Sliz, Univ. of Oulu (Finland)
R. Myllyla, Univ. of Oulu (Finland)


Published in SPIE Proceedings Vol. 8435:
Organic Photonics V
Barry P. Rand; Chihaya Adachi; Volker van Elsbergen, Editor(s)

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