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Proceedings Paper

Low dark current small pixel large format InGaAs 2D photodetector array development at Teledyne Judson Technologies
Author(s): Henry Yuan; Mike Meixell; Jiawen Zhang; Philip Bey; Joe Kimchi; Louis C. Kilmer
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Paper Abstract

Teledyne Judson Technologies (TJT) has been developing technology for small pixel, large format, low dark current, and low capacitance NIR/SWIR InGaAs detector arrays, aiming to produce <10μm pixels and >2Kx2K format arrays that can be operated at or near room temperature. Furthermore, TJT is now developing technology for sub-10μm pixel arrays in response to requirements for a variety of low light level (LLL) imaging applications. In this paper, we will review test data that demonstrates lower dark current density for 10-20μm pixel arrays. We will present preliminary results on the successful fabrication of test arrays with pixels as small as 5μm. In addition, a lot of effort has been made to control and reduce the detector pixel capacitance which can become another source of detector noise. TJT is also developing 4" InGaAs wafer process and now offers four different types of InGaAs 2D arrays/FPAs that are tailored to different customer requirements for dark current, capacitance, spectral response, and bias range.

Paper Details

Date Published: 31 May 2012
PDF: 8 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835309 (31 May 2012); doi: 10.1117/12.921232
Show Author Affiliations
Henry Yuan, Teledyne Judson Technologies (United States)
Mike Meixell, Teledyne Judson Technologies (United States)
Jiawen Zhang, Teledyne Judson Technologies (United States)
Philip Bey, Teledyne Judson Technologies (United States)
Joe Kimchi, Teledyne Judson Technologies (United States)
Louis C. Kilmer, Teledyne Judson Technologies (United States)


Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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