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Proceedings Paper

Theoretical study about the gain in indirect bandgap semiconductor acousto-optical cavities with simultaneous photon and phonon confinement
Author(s): José M. Escalante Fernandez; Alejandro Martínez
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Paper Abstract

We study the gain in an acousto-optical cavity made of an indirect bandgap semiconductor with simultaneous confinement of photons and photons. We obtain that the phonon confinement in such a cavity can give rise to optical gain at room temperature.

Paper Details

Date Published: 10 May 2012
PDF: 20 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84321M (10 May 2012); doi: 10.1117/12.921080
Show Author Affiliations
José M. Escalante Fernandez, Univ. Politècnica de València (Spain)
Alejandro Martínez, Univ. Politècnica de València (Spain)


Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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