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Proceedings Paper

A comparison between Si and GaAs nanowire-based photovoltaic devices
Author(s): S. Abdellatif; K. Kirah; H. Ghali; W. Anis
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Paper Abstract

A comparison between Silicon (Si) which is an indirect band-gap semiconductor and Gallium Arsenide (GaAs) as a direct band-gap semiconductor for vertical-aligned nanowire radial pn junction-based photovoltaic (PV) devices is presented. The study takes place through determining the fill factor, the power conversion efficiency, the optimum device length and the spectrum of the quantum efficiency. The sensitivity of both Si and GaAs nanowire to temperature variations is also investigated. Finally, the array effect for nanowires of each material alone then of arrays of mixed elements' types is simulated. The results are found to be in accordance with the available experimental measurements.

Paper Details

Date Published: 24 December 2011
PDF: 11 pages
Proc. SPIE 8204, Smart Nano-Micro Materials and Devices, 820412 (24 December 2011); doi: 10.1117/12.921047
Show Author Affiliations
S. Abdellatif, The British Univ. in Egypt (Egypt)
K. Kirah, The French Univ. of Egypt (Egypt)
H. Ghali, The British Univ. in Egypt (Egypt)
W. Anis, Ain Shams Univ. (Egypt)


Published in SPIE Proceedings Vol. 8204:
Smart Nano-Micro Materials and Devices
Saulius Juodkazis; Min Gu, Editor(s)

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