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Proceedings Paper

Photodiodes on the basis of gallium phosphide with increased sensitivity at a wavelength of 254 nm
Author(s): Yu. Dobrovolsky; L. Pidkamin; G. Prokhorov
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Paper Abstract

Is offered a modificated technology for photodiodes based on n+-n-GaP-SnO2(F). This technology is based on analysis of parameters, which are determining the sensitivity of the photodiode with the surface-barrier structure. Also, a special algorithm of computer simulation was developed.. As a result a monochromatic current sensitivity at a wavelength 254 nm (no more than 0,09 - 0,08 A/W) was obtained. The uniformity of the sensitivity of a photosensitive element was no more than 5%.

Paper Details

Date Published: 23 November 2011
PDF: 6 pages
Proc. SPIE 8338, Tenth International Conference on Correlation Optics, 83380N (23 November 2011); doi: 10.1117/12.920931
Show Author Affiliations
Yu. Dobrovolsky, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
L. Pidkamin, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
G. Prokhorov, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 8338:
Tenth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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