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Proceedings Paper

Optimization and shape control of GaN nanopillars fabricated by inductively coupled plasma etching
Author(s): Dipak Paramanik; Abhishek Motayed; Geetha S. Aluri; Sergiy Krylyuk; Albert V. Davydov; Matthew King; Sean McLaughlin; Shalini Gupta; Harlan Cramer; Babak Nikoobakht
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Paper Abstract

We report the systematic etching profile of GaN nano pillar structures using inductively coupled plasma (ICP) etching techniques. We were able to control the side wall angle, shape and dimension of such nanoscale structures by carefully selecting the etching parameters. We present the effects of variations of the etch parameters, such as ICP power, RF power, chamber pressure, and substrate temperature on the etch characteristics, such as etch rate, sidewall angle, anisotropy, mask erosion, and surface roughness. Utilizing such methods, we demonstrated the fabrication of nanoscale structures with designed shapes and dimensions over large area. Nanocolumns with diameter of 120 nm and height of 1.6 μm with sidewall angle of 86° (90° represent a vertical sidewall) were fabricated. Nanocones with tip diameter of 30 nm and height of 1.6 μm with sidewall angle of 70° were demonstrated. The structures produced by such top-down method could potentially be used in light-emitting diodes, laser diodes, photodetectors, vertical transistors, fieldemitters, and photovoltaic devices.

Paper Details

Date Published: 8 May 2012
PDF: 10 pages
Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83732V (8 May 2012); doi: 10.1117/12.920836
Show Author Affiliations
Dipak Paramanik, National Institute of Standards and Technology (United States)
Abhishek Motayed, National Institute of Standards and Technology (United States)
Univ. of Maryland, College Park (United States)
Geetha S. Aluri, National Institute of Standards and Technology (United States)
Sergiy Krylyuk, National Institute of Standards and Technology (United States)
Univ. of Maryland, College Park (United States)
Albert V. Davydov, National Institute of Standards and Technology (United States)
Matthew King, Northrop Grumman Electronic Systems (United States)
Sean McLaughlin, Northrop Grumman Electronic Systems (United States)
Shalini Gupta, Northrop Grumman Electronic Systems (United States)
Harlan Cramer, Northrop Grumman Electronic Systems (United States)
Babak Nikoobakht, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 8373:
Micro- and Nanotechnology Sensors, Systems, and Applications IV
Thomas George; M. Saif Islam; Achyut Dutta, Editor(s)

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