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Proceedings Paper

Monolithic integration of high-speed Ge photo-detectors on SOI-based WDM receivers
Author(s): Wei Qian; Dazeng Feng; Hong Liang; Joe Zhou; Yong Liu; Shirong Liao; Cheng-Chih Kung; Joan Fong; B. Jonathan Luff; Roshanak Shafiiha; Daniel Lee; Wayne White; Mehdi Asghari
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Paper Abstract

We report a novel, compact design of high speed Ge photo detector integrated with an echelle demultiplexer on a large cross-section SOI platform with low insertion loss and low fiber coupling loss. A narrow Ge photo detector waveguide is directly butt-coupled to a Si waveguide to ensure low loss and high speed operation. With a Ge detector size of only 0.8×15 μm2, the device achieves greater than 30 GHz modulation speed. The results indicate that the device speed is transit time limited and that the detector performance benefits from the high electron and hole drift velocity of germanium. The dark current of the detector is less than 0.5μA at -1V. This small footprint high speed Si-based WDM receiver can be fabricated using CMOS processes and used for multichannel terabit data transmission with low manufacturing cost.

Paper Details

Date Published: 19 May 2012
PDF: 6 pages
Proc. SPIE 8376, Photonic Microdevices/Microstructures for Sensing IV, 83760P (19 May 2012); doi: 10.1117/12.920831
Show Author Affiliations
Wei Qian, Kotura, Inc. (United States)
Dazeng Feng, Kotura, Inc. (United States)
Hong Liang, Kotura, Inc. (United States)
Joe Zhou, Kotura, Inc. (United States)
Yong Liu, Kotura, Inc. (United States)
Shirong Liao, Kotura, Inc. (United States)
Cheng-Chih Kung, Kotura, Inc. (United States)
Joan Fong, Kotura, Inc. (United States)
B. Jonathan Luff, Kotura, Inc. (United States)
Roshanak Shafiiha, Kotura, Inc. (United States)
Daniel Lee, Kotura, Inc. (United States)
Wayne White, Kotura, Inc. (United States)
Mehdi Asghari, Kotura, Inc. (United States)


Published in SPIE Proceedings Vol. 8376:
Photonic Microdevices/Microstructures for Sensing IV
Xudong Fan; Hai Xiao; Anbo Wang, Editor(s)

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