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Proceedings Paper

MWIR InAs1-xSbx nCBn detectors data and analysis
Author(s): A. I. D'Souza; E. Robinson; A. C. Ionescu; D. Okerlund; T. J. de Lyon; R. D. Rajavel; H. Sharifi; D. Yap; N. Dhar; P. S. Wijewarnasuriya; C. Grein
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Paper Abstract

In InAs1-xSbx material alloy composition was adjusted to achieve 200K cutoff wavelengths in the 5 μm range. Reflectance was minimized and absorption in the InAs1-xSbx material maximized by the use of pyramid shaped structures fabricated in the InAs1-xSbx material which function as an AR coating. Compound-barrier (CB) detectors were fabricated and tested for optical response and dark current density versus bias measurements were acquired as a function of temperature. For 5 μm cutoff detectors, QE is high, ~ 75 % between 4.0 μm and 4.6 μm and > 80 % between 2.0 μand 4.0 μm, demonstrating the efficacy of the pyramids as photon trap structures and as a replacement for multi-layer AR-coatings. Jdark in the low 10-3 A/cm2 range at 200 K and low 10-5 A/cm2 range at 150 K was measured at the bias at which the QE peaked.

Paper Details

Date Published: 31 May 2012
PDF: 8 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835333 (31 May 2012); doi: 10.1117/12.920495
Show Author Affiliations
A. I. D'Souza, DRS Sensors & Targeting Systems, Inc. (United States)
E. Robinson, DRS Sensors & Targeting Systems, Inc. (United States)
A. C. Ionescu, DRS Sensors & Targeting Systems, Inc. (United States)
D. Okerlund, DRS Sensors & Targeting Systems, Inc. (United States)
T. J. de Lyon, HRL Labs., LLC (United States)
R. D. Rajavel, HRL Labs., LLC (United States)
H. Sharifi, HRL Labs., LLC (United States)
D. Yap, HRL Labs., LLC (United States)
N. Dhar, Defense Advanced Research Projects Agency (United States)
P. S. Wijewarnasuriya, U.S. Army Research Lab. (United States)
C. Grein, Univ. of Illinois at Chicago (United States)


Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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