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Proceedings Paper

Ultimate top-down processes for future nanoscale devices
Author(s): Seiji Samukawa
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Paper Abstract

For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, we introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

Paper Details

Date Published: 16 March 2012
PDF: 9 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 832804 (16 March 2012); doi: 10.1117/12.920490
Show Author Affiliations
Seiji Samukawa, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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