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Proceedings Paper

Plasma etch transfer of self-assembled polymer patterns
Author(s): Danvers E. Johnston; Ming Lu; Charles T. Black
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Paper Abstract

Self-organizing block copolymer thin films hold promise as a photolithography enhancement material for the 22-nm microelectronics technology generation and beyond, primarily because of their ability to form highly uniform patterns at the relevant nanometer-scale dimensions. Importantly, the materials are chemically similar to photoresists and can be implemented in synergy with photolithography. Beyond the challenges of achieving sufficient control of self-assembled pattern defectivity and feature roughness, block copolymer-based patterning requires creation of robust processes for transferring the polymer patterns into underlying electronic materials. Here, we describe research efforts in hardening block copolymer resist patterns using inorganic materials and high aspect ratio plasma etch transfer of self-assembled patterns to silicon using fluorine-based etch chemistries.

Paper Details

Date Published: 17 March 2012
PDF: 8 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280A (17 March 2012); doi: 10.1117/12.920311
Show Author Affiliations
Danvers E. Johnston, Brookhaven National Lab. (United States)
Ming Lu, Brookhaven National Lab. (United States)
Charles T. Black, Brookhaven National Lab. (United States)


Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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