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Proceedings Paper

Optical tests of 200mm MWIR polarizer wafers: methodology and results
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Paper Abstract

Wiregrid polarizers are commonly employed as optical components in polarization sensitive imaging systems in the infrared waveband. Achieving acceptable performance from wiregrid polarizers typically requires small feature sizes and small periods, large aspect ratios, and subtle control over duty cycle. In many cases, the metrics mentioned above can be realized with manufacturing techniques developed in the semiconductor industry. However, metrology techniques commonly utilized in the semiconductor industry are not necessarily conducive to measuring the effective performance across a large substrate. These techniques typically allow testing or inspection of only very small scale representations of the subwavelength features on the wiregrid polarizers. These techniques - for example the scanning electron micrograph, or SEM - may also damage the wiregrid polarizer. In this paper we present a non-destructive optical imaging method for measuring the performance of the entire infrared wiregrid polarizer produced on a 200mm substrate. This test method allows the users to see large scale errors present during the fabrication process that may not be visible with other metrology techniques. In addition, this technique directly correlates polarizer performance to manufacturing errors.

Paper Details

Date Published: 8 June 2012
PDF: 10 pages
Proc. SPIE 8364, Polarization: Measurement, Analysis, and Remote Sensing X, 83640J (8 June 2012); doi: 10.1117/12.920155
Show Author Affiliations
Peter S. Erbach, Polaris Sensor Technologies, Inc. (United States)
J. Larry Pezzaniti, Polaris Sensor Technologies, Inc. (United States)
John C. Reinhardt, Polaris Sensor Technologies, Inc. (United States)
David B. Chenault, Polaris Sensor Technologies, Inc. (United States)
Dennis H. Goldstein, Polaris Sensor Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 8364:
Polarization: Measurement, Analysis, and Remote Sensing X
David B. Chenault; Dennis H. Goldstein, Editor(s)

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