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Proceedings Paper

Characteristics of the large-area stacked microstructured semiconductor neutron detector
Author(s): S. L. Bellinger; R. G. Fronk; T. J. Sobering; D. S. McGregor
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Paper Abstract

Silicon diodes with large aspect ratio microstructures backfilled with 6LiF show a dramatic increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology with increased microstructure depths and detector stacking methods that work to increase thermal-neutron detection efficiency. An individual 4-cm2 MSND was fabricated. A stacked 4-cm2 MSND was fabricated by coupling two detectors back-to-back, along with counting electronics, into a single detector. The individual MSND delivered 16% intrinsic thermal-neutron detection efficiency and the stacked MSND delivered 32% intrinsic thermal-neutron detection efficiency. The intrinsic thermal-neutron detection efficiency depends strongly upon the geometry, size, and depth of the silicon microstructures. This work is part of on-going research to develop solid-state semiconductor neutron detectors with high neutron detection efficiencies.

Paper Details

Date Published: 3 May 2012
PDF: 10 pages
Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83730I (3 May 2012); doi: 10.1117/12.919869
Show Author Affiliations
S. L. Bellinger, Kansas State Univ. (United States)
R. G. Fronk, Kansas State Univ. (United States)
T. J. Sobering, Kansas State Univ. (United States)
D. S. McGregor, Kansas State Univ. (United States)

Published in SPIE Proceedings Vol. 8373:
Micro- and Nanotechnology Sensors, Systems, and Applications IV
Thomas George; M. Saif Islam; Achyut Dutta, Editor(s)

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