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Proceedings Paper

Electronic transport in InAs/GaSb type-II superlattices for long wavelength infrared focal plane array applications
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Paper Abstract

Electronic transport parameters in a nominally P+/π/P+ InAs/GaSb type-II superlattice vertical photoconductor structure for long-wavelength infrared detectors have been characterized employing magnetic field dependent resistivity and Hall-effect measurements, and high-resolution mobility spectrum analysis. Carrier transport parameters from both the P+ and nominally π regions were obtained over the 80 to 300K temperature range. At 300 K, the minority carrier electrons in the nominally π region was found to be characterized by a mobility and concentration of 11,000 cm2/Vs and 1.1×1017 cm-3, respectively. Taking into account our previously reported room-temperature vertical electron transport parameters,1 the vertical to lateral mobility and carrier concentration ratios have been determined to be 0.19 and 5.5×10-4 , respectively. A miniband energy gap of 192±8 meV was estimated from the thermal activation of the minority carrier electrons in the lightly doped InAs/GaSb superlattice region.

Paper Details

Date Published: 31 May 2012
PDF: 5 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530Y (31 May 2012); doi: 10.1117/12.919767
Show Author Affiliations
G. A. Umana-Membreno, The Univ. of Western Australia (Australia)
H. Kala, The Univ. of Western Australia (Australia)
B. Klein, The Univ. of New Mexico (United States)
J. Antoszewski, The Univ. of Western Australia (Australia)
N. Gautam, The Univ. of New Mexico (United States)
M. N. Kutty, The Univ. of New Mexico (United States)
E. Plis, The Univ. of New Mexico (United States)
S. Krishna, The Univ. of New Mexico (United States)
L. Faraone, The Univ. of Western Australia (Australia)


Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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