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Proceedings Paper

The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD
Author(s): S. L. Li; H. Wang; J. Zhang; Y.-Y. Fang; W. Fan; W. Tian; Y. Li; Y. Tian; H. Xiong; C. Q. Chen
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Paper Abstract

AlN epilayers were grown directly on sapphire (0001) substrates using a combined growth scheme, a low temperature nucleation layer and a high temperature pulsed-atomic-layer-epitaxy layer obtained via metal organic chemical vapor deposition. The effects of growth temperature on properties of AlN films were investigated by atomic force microscopy, high resolution X-Ray diffraction and transmittance spectral. Due to the strong influence of growth temperature on the mobility of Al adatoms and parasitic reaction, a different surface morphology and growth rate for AlN films were obtained by varying the growth temperature.

Paper Details

Date Published: 22 February 2012
PDF: 5 pages
Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83331H (22 February 2012); doi: 10.1117/12.919653
Show Author Affiliations
S. L. Li, Wuhan National Lab. for Optoelectronics (China)
H. Wang, Wuhan National Lab. for Optoelectronics (China)
J. Zhang, Wuhan National Lab. for Optoelectronics (China)
Y.-Y. Fang, Wuhan National Lab. for Optoelectronics (China)
W. Fan, Wuhan National Lab. for Optoelectronics (China)
W. Tian, Wuhan National Lab. for Optoelectronics (China)
Y. Li, Wuhan National Lab. for Optoelectronics (China)
Y. Tian, Wuhan National Lab. for Optoelectronics (China)
H. Xiong, Wuhan National Lab. for Optoelectronics (China)
C. Q. Chen, Wuhan National Lab. for Optoelectronics (China)


Published in SPIE Proceedings Vol. 8333:
Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration

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