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Proceedings Paper

Investigation of optically injected charge carrier dynamics in silicon wafers using terahertz spectroscopic imaging
Author(s): Thomas Arnold; Martin De Biasio; Wolfgang Muehleisen; Raimund Leitner
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Paper Abstract

Terahertz (THz) time-domain spectroscopy has proven to be a promising technology for a wide range of applications, such as inspection of nished products or materials, quality control, biomedical imaging and diagnostics, counterfeit detection and characterization of semiconductors. This paper investigates the applicability of THz time-domain spectroscopy for the characterization of silicon solar cell properties such as: conductivity, charge carrier mobility and density. Moreover, the possibilities for THz spectroscopy and imaging for the defect analysis in semiconductor and photovoltaic materials are investigated. THz-pump/THz-probe measurements were carried out on silicon wafers which were illuminated by a halogen light source to inject free charge carriers. Initial results indicate that THz time-domain spectroscopy is a promising technique for the characterization of silicon wafers for the photovoltaic industry.

Paper Details

Date Published: 22 May 2012
PDF: 6 pages
Proc. SPIE 8374, Next-Generation Spectroscopic Technologies V, 837407 (22 May 2012); doi: 10.1117/12.919061
Show Author Affiliations
Thomas Arnold, CTR Carinthian Tech Research AG (Austria)
Martin De Biasio, CTR Carinthian Tech Research AG (Austria)
Wolfgang Muehleisen, CTR Carinthian Tech Research AG (Austria)
Raimund Leitner, CTR Carinthian Tech Research AG (Austria)

Published in SPIE Proceedings Vol. 8374:
Next-Generation Spectroscopic Technologies V
Mark A. Druy; Richard A. Crocombe, Editor(s)

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