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Proceedings Paper

Modeling of dark current suppression in unipolar barrier infrared detectors
Author(s): Jun Wang; Xiaoshuang Chen; Weida Hu; Yongguo Chen; Lin Wang; Wei Lu; Faqiang Xu
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Paper Abstract

In this paper, the physical mechanism of unipolar barrier structures is elaborated for dark current suppression. To better understand the performance characteristics of the devices and optimize the structures, we have performed numerical drift-diffusion simulations of both n-side and p-side InAs based unipolar barrier photodiodes with AlAs0.18Sb0.82 barriers, as well as conventional pn junction detectors. Numerical simulation was used to calculate the current-voltage (I-V) characteristic and R0A values for InAs unipolar barrier photodiodes and traditional pn junction photodiodes. The performances of different device structures have been investigated for temperatures from 150 K to 350 K. Comparing to conventional devices, the unipolar barrier device has shown significant performance improvement.

Paper Details

Date Published: 31 May 2012
PDF: 7 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835335 (31 May 2012); doi: 10.1117/12.918960
Show Author Affiliations
Jun Wang, Shanghai Institute of Technical Physics (China)
Univ. of Science and Technology of China (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Weida Hu, Shanghai Institute of Technical Physics (China)
Yongguo Chen, Shanghai Institute of Technical Physics (China)
Lin Wang, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
Faqiang Xu, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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