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Proceedings Paper

Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k-p method
Author(s): Baile Chen; A. L. Holmes; Viktor Khalfin; Igor Kudryashov; Bora M. Onat
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Paper Abstract

Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k•p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5×1012 cm-2, peak gain values around 2.6-2.7 μm wavelengths of the order of 1000 cm-1 can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2μm at room temperature.

Paper Details

Date Published: 7 May 2012
PDF: 7 pages
Proc. SPIE 8381, Laser Technology for Defense and Security VIII, 83810F (7 May 2012); doi: 10.1117/12.918764
Show Author Affiliations
Baile Chen, Univ. of Virginia (United States)
A. L. Holmes, Univ. of Virginia (United States)
Viktor Khalfin, Princeton Lightwave, Inc. (United States)
Igor Kudryashov, Princeton Lightwave, Inc. (United States)
Bora M. Onat, Princeton Lightwave, Inc. (United States)


Published in SPIE Proceedings Vol. 8381:
Laser Technology for Defense and Security VIII
Mark Dubinskii; Stephen G. Post, Editor(s)

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