Share Email Print

Proceedings Paper

Closing the infrastructure gap: status of the AIMS EUV project
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The EUV mask infrastructure is of key importance for a successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks an actinic review of potential defect sites is required. With such a review it can be decided if a defect needs to be repaired or compensated. It also serves as verification whether the respective absorber or compensational repair with e.g. the MeRiT® tool has been successful, i.e. it closes the control loop in mask repair. To realize such an actinic review tool, Carl Zeiss and the SEMATECH EUVL Mask Infrastructure consortium started a development programme for an EUV aerial image metrology system (AIMS™ EUV). In this paper, we discuss the application of the AIMS™ EUV in the compensational repair process of multilayer and blank defects and present the status of the AIMS™ EUV project.

Paper Details

Date Published: 22 March 2012
PDF: 8 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220L (22 March 2012); doi: 10.1117/12.918691
Show Author Affiliations
Dirk Hellweg, Carl Zeiss SMT GmbH (Germany)
Markus Weiss, Carl Zeiss SMT GmbH (Germany)
Sascha Perlitz, Carl Zeiss SMS GmbH (Germany)
Jan Hendrik Peters, Carl Zeiss SMS GmbH (Germany)
Wolfgang Harnisch, Carl Zeiss SMS GmbH (Germany)
Michael Goldstein, SEMATECH North (United States)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

© SPIE. Terms of Use
Back to Top