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Proceedings Paper

Free form source and mask optimization for negative tone resist development for 22nm node contact holes
Author(s): Tamer H. Coskun; Huixiong Dai; Vishnu Kamat; Ching-Mei Hsu; Gaetano Santoro; Chris Ngai; Mario Reybrouck; Grozdan Grozev; Hsu-Ting Huang
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Paper Abstract

In this paper we demonstrate the feasibility of Negative Tone Development (NTD) process to pattern 22nm node contact holes leveraging freeform source and model based assist features. We demonstrate this combined technology with detailed simulation and wafer results. Analysis also includes further improvement achievable using a freeform source compared to a conventional standard source while keeping the mask optimization approaches the same. Similar studies are performed using the Positive Tone Development (PTD) process to demonstrate the benefits of the NTD process.

Paper Details

Date Published: 13 March 2012
PDF: 14 pages
Proc. SPIE 8326, Optical Microlithography XXV, 83260V (13 March 2012); doi: 10.1117/12.918459
Show Author Affiliations
Tamer H. Coskun, Cadence Design Systems (United States)
Huixiong Dai, Applied Materials, Inc. (United States)
Vishnu Kamat, Cadence Design Systems (United States)
Ching-Mei Hsu, Applied Materials, Inc. (United States)
Gaetano Santoro, Applied Materials, Inc. (United States)
Chris Ngai, Applied Materials, Inc. (United States)
Mario Reybrouck, FUJIFILM Electronic Materials (Europe) N.V. (Belgium)
Grozdan Grozev, FUJIFILM Electronic Materials (Europe) N.V. (Belgium)
Hsu-Ting Huang, Cadence Design Systems (United States)


Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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