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Proceedings Paper

Roughness metrology of gate all around silicon nanowire devices
Author(s): Shimon Levi; Ishai Schwarzband; Roman Kris; Ofer Adan; Guy M. Cohen; Sarunya Bangsaruntip; Lynne Gignac
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Paper Abstract

In this paper we present physical characteristics of Silicon Nano Wires (SiNW) fabrication processes, in line SEM metrology measurements, and a new methodology to calibrate and correct in line roughness measurements, improving measurement accuracy. Silicon Nano Wires (SiNW) with widths of 5 - 25 nm were characterized. Hydrogen annealing was shown as a useful method for the fabrication of smooth suspended SiNW that are used to build gate-all-around MOSFETs [1]. Wires that were annealed in H2 exhibit surface roughness below 1 nm along the full length of the 100 nm long suspended wires. Different smoothing processes yield SiNWs with edge roughness values in the sub nanometer range. Such small differences in roughness values, provide an interesting opportunity to evaluate sensitivity of the SEM metrology algorithms and measurement accuracy. A simulation program modeling SEM images including small features was developed, taking into account the main factors that affect the SEM signal formation. Synthetic (simulated) images of SiNW in a range of 5 - 25 nm and roughness of 0 - 1 nm were produced. Using synthetic images with added Line Edge Roughness (LER), we characterized the performance and sensitivity of LER algorithms and metrics. Fabricated SiNW that received various smoothing and thinning treatments were measured with a CD-SEM. Results were compared to calibrate and validate the experimental CD-SEM results.

Paper Details

Date Published: 9 April 2012
PDF: 14 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83240H (9 April 2012); doi: 10.1117/12.918402
Show Author Affiliations
Shimon Levi, Applied Materials (Israel)
Ishai Schwarzband, Applied Materials (Israel)
Roman Kris, Applied Materials (Israel)
Ofer Adan, Applied Materials (Israel)
Guy M. Cohen, IBM Corp. (United States)
Sarunya Bangsaruntip, IBM Corp. (United States)
Lynne Gignac, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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