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Proceedings Paper

Ultraviolet photodetectors based on ZnO nanostructures
Author(s): Fawen Guo; Jinsong Huang
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Paper Abstract

Ultraviolet photodetectors have attracted increasing attention due to its widespread use in civilian and military fields in the past decades. Many kinds of inorganic and organic materials have been used for UV photodetectors so far. ZnO is one of the most prominent semiconductors among them, because it has a wide-band-gap of ~3.35 eV and a large exciton binding energy of 60 meV. As for ZnO nanostructures, they play important roles in developing UV photodetectors. It is fair to state that ZnO nanostructures are probably the most important nanostructures that present excellent performance in photodetectors. In this review, we will describe state-of-the-arts UV photodetectors based on ZnO nanostructures and our recent progress on highly sensitive ZnO hybrid UV photodetector with specific detectivity up to 3.4 ×1015 Jones.

Paper Details

Date Published: 21 May 2012
PDF: 12 pages
Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83732K (21 May 2012); doi: 10.1117/12.918340
Show Author Affiliations
Fawen Guo, Univ. of Nebraska-Lincoln (United States)
Jinsong Huang, Univ. of Nebraska-Lincoln (United States)

Published in SPIE Proceedings Vol. 8373:
Micro- and Nanotechnology Sensors, Systems, and Applications IV
Thomas George; M. Saif Islam; Achyut Dutta, Editor(s)

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