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Proceedings Paper

High operating temperature epi-InSb and XBn-InAsSb photodetectors
Author(s): Itay Shtrichman; Daniel Aronov; Michael ben Ezra; Itzik Barkai; Eyal Berkowicz; Maya Brumer; Rami Fraenkel; Alex Glozman; Steve Grossman; Eli Jacobsohn; Olga Klin; Philip Klipstein; Inna Lukomsky; Lior Shkedy; Noam Snapi; Michael Yassen; Eliezer Weiss
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Paper Abstract

In MWIR photodiodes made from InSb, InAs or their alloy InAs1-xSbx, the dark current is generally limited by Generation-Recombination (G-R) processes. In order to reach a background limited operating temperature higher than ~80 K, steps must be taken to suppress this G-R current. At SCD we have adopted two main strategies. The first is to reduce the concentration of G-R centres, by changing from an implanted InSb diode junction to a higher quality one grown by Molecular Beam Epitaxy (MBE). Our epi-InSb diodes have a background limited performance (BLIP) temperature of ~105 K at F/4, in 15 to 30 μm pitch Focal Plane Arrays (FPAs). This operation temperature increase delivers a typical saving in cooling power of ~20%. In order to achieve even higher operating temperatures, we have developed a new XBnn bariode technology, in which the bulk G-R current is totally suppressed. This technology includes nBnn and pBnn devices, as well as more complex structures. In all cases, the basic unit is an n-type AlSb1-yAsy / InAs1-xSbx barrier layer / photon-absorbing layer structure. These FPAs, with 15 to 30 μm pitch and a cut-off wavelength of ~ 4.1 μm, exhibit a BLIP temperature of ~ 175K at F/3. The cooling power requirement is reduced by ~60% compared with conventional 77K operation. The operation of both our diode and bariode detectors at high temperatures results in an improved range of solutions for various applications, especially where Size, Weight, and Power (SWaP) are critical. Advantages include faster cool-down time and mission readiness, longer mission times, and higher cooler reliability, as well as very low dark current and an enhanced Signal to Noise Ratio (SNR) at lower operating temperatures. This paper discusses the system level performance for cut-off wavelengths appropriate to the sensing materials in each detector type. Details of the radiometric parameters of each detector type are then presented in turn.

Paper Details

Date Published: 31 May 2012
PDF: 13 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83532Y (31 May 2012); doi: 10.1117/12.918324
Show Author Affiliations
Itay Shtrichman, Semiconductor Devices (SCD) (Israel)
Daniel Aronov, Semiconductor Devices (SCD) (Israel)
Michael ben Ezra, Israel MOD (Israel)
Itzik Barkai, Semiconductor Devices (SCD) (Israel)
Eyal Berkowicz, Semiconductor Devices (SCD) (Israel)
Maya Brumer, Semiconductor Devices (SCD) (Israel)
Rami Fraenkel, Semiconductor Devices (SCD) (Israel)
Alex Glozman, Semiconductor Devices (SCD) (Israel)
Steve Grossman, Semiconductor Devices (SCD) (Israel)
Eli Jacobsohn, Semiconductor Devices (SCD) (Israel)
Olga Klin, Semiconductor Devices (SCD) (Israel)
Philip Klipstein, Semiconductor Devices (SCD) (Israel)
Inna Lukomsky, Semiconductor Devices (SCD) (Israel)
Lior Shkedy, Semiconductor Devices (SCD) (Israel)
Noam Snapi, Semiconductor Devices (SCD) (Israel)
Michael Yassen, Semiconductor Devices (SCD) (Israel)
Eliezer Weiss, Semiconductor Devices (SCD) (Israel)


Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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