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Proceedings Paper

Closing the gap for EUV mask repair
Author(s): T. Bret; R. Jonckheere; D. Van den Heuvel; C. Baur; M. Waiblinger; G. Baralia
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Paper Abstract

The EUV-photomask is used as mirror and no longer as transmissive device. In order to yield defect-free reticles, repair capability is required for defects in the absorber and for defects in the mirror. Defects can propagate between the EUV mask layers, which makes the detection and the repair complex or impossible if conventional methods are used. In this paper we give an overview of the different defect types. We discuss the EUV repair requirements including SEMinvisible multilayer defects, and demonstrate e-beam repair performance. The repairs are qualified by SEM, AFM and through-focus wafer prints. Furthermore a new repair strategy involving in-situ AFM is introduced. Successful repair is demonstrated on real defects.

Paper Details

Date Published: 22 March 2012
PDF: 9 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220C (22 March 2012); doi: 10.1117/12.918322
Show Author Affiliations
T. Bret, Carl Zeiss SMS GmbH (Germany)
R. Jonckheere, IMEC (Belgium)
D. Van den Heuvel, IMEC (Belgium)
C. Baur, Carl Zeiss SMS GmbH (Germany)
M. Waiblinger, Carl Zeiss SMS GmbH (Germany)
G. Baralia, Carl Zeiss SMS GmbH (Germany)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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