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Proceedings Paper

Block copolymer directed self-assembly enables sublithographic patterning for device fabrication
Author(s): H.-S. Philip Wong; Chris Bencher; He Yi; Xin-Yu Bao; Li-Wen Chang
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Paper Abstract

The use of block copolymer self-assembly for device fabrication in the semiconductor industry has been envisioned for over a decade. Early works by the groups of Hawker, Russell, and Nealey [1-2] have shown a high degree of dimensional control of the self-assembled features over large areas with high degree of ordering. The exquisite dimensional control at nanometer-scale feature sizes is one of the most attractive properties of block copolymer self-assembly. At the same time, device and circuit fabrication for the semiconductor industry requires accurate placement of desired features at irregular positions on the chip. The need to coax the self-assembled features into circuit layout friendly location is a roadblock for introducing self-assembly into semiconductor manufacturing. Directed self-assembly (DSA) and the use of topography to direct the self-assembly (graphoepitaxy) have shown great promise in solving the placement problem [3-4]. In this paper, we review recent progress in using block copolymer directed self-assembly for patterning sub-20 nm contact holes for practical circuits.

Paper Details

Date Published: 5 March 2012
PDF: 7 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 832303 (5 March 2012); doi: 10.1117/12.918312
Show Author Affiliations
H.-S. Philip Wong, Stanford Univ. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
He Yi, Stanford Univ. (United States)
Xin-Yu Bao, Stanford Univ. (United States)
Li-Wen Chang, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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