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Paper Abstract

In this work, 3D mask modeling capabilities of Calibre will be used to assess mask topography impact on EUV imaging. The EUV mask absorber height and the non-telecentric illumination at mask level, modulate the captured intensity from the shadowed mask area through the reflective optics on to the wafer, named as the mask shadowing effect. On the other hand, thinning the mask absorber height results in unwanted background intensity, or called flare. A true compromise has to be taken into account for the height parameter of a EUV mask absorber. We will discuss the state-of-the-art 3D mask modeling capabilities, and will present methodologies to tackle the described EUV mask shadowing effect in Calibre software. The findings will be validated against experiments on ASML's NXE:3100 EUV scanner at imec. Masks with two different absorber heights will be evaluated on various combinations of features containing line/space and contact-hole.

Paper Details

Date Published: 23 March 2012
PDF: 11 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832224 (23 March 2012); doi: 10.1117/12.918267
Show Author Affiliations
Julien Mailfert, Mentor Graphics Corp. (United States)
Christian Zuniga, Mentor Graphics Corp. (United States)
Vicky Philipsen, IMEC (Belgium)
Konstantinos Adam, Mentor Graphics Corp. (United States)
Michael Lam, Mentor Graphics Corp. (United States)
James Word, Mentor Graphics Corp. (United States)
Eric Hendrickx, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Bruce Smith, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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