Share Email Print

Proceedings Paper

Small particle defect characterization on critical layers of 22nm Spacer Self-Aligned Double Patterning (SADP)
Author(s): Gurminder Singh; Kfir Dotan; Saar Shabtay; Man-Ping Cai; Noam Shachar; Chris Ngai; Chris Bencher; Liyan Miao; Yongmei Chen
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The 22nm Spacer Self Aligned Double Patterning (SADP) process developed at Applied Materials' Maydan Technology Center was used to characterize small particle defects in the four critical steps of the process flow: Lithography, APF Etch, Spacer Deposition, Spacer Open. Small Particle defect contamination poses a risk to yield in each of the SADP process steps (Lithography, Deposition and Etch) and requires an understanding of their sources and impact on each subsequent step. The defect inspection was carried out using two different inspection platforms; DFinderTM which is designed for detection of 3D defects and UVision TM 3 which is designed for detection of 2D defects. Small particle defects (smaller than 60nm), in the Lithography and APF Etch process steps were shown to become "killer" defects at the Spacer Open step. More study is needed to develop inspection strategies based on a wider range of defect types.

Paper Details

Date Published: 5 April 2012
PDF: 5 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83241X (5 April 2012); doi: 10.1117/12.918266
Show Author Affiliations
Gurminder Singh, Applied Materials, Inc. (United States)
Kfir Dotan, Applied Materials, Inc. (United States)
Saar Shabtay, Applied Materials, Inc. (United States)
Man-Ping Cai, Applied Materials, Inc. (United States)
Noam Shachar, Applied Materials, Inc. (United States)
Chris Ngai, Applied Materials, Inc. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
Liyan Miao, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

© SPIE. Terms of Use
Back to Top