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Proceedings Paper

50X, 75X mask cleaning effects on EUV lithography process and lifetime: lines and spaces, contacts, and LER
Author(s): Brittany M. McClinton; Robert J. Chen; Simi A. George; Yongbae Kim; Lorie-Mae Baclea-an; Patrick P. Naulleau
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Paper Abstract

In this study we examine the effects on lithographic performance due to repetitive cleans on a mask patterned for use in extreme ultraviolet lithography (EUVL). Exposures were carried out at the SEMATECH Berkeley micro-exposure tool (MET) on both a cleaned mask and a reference (uncleaned) mask with the same mask architectures. The performance is measured against the process window for lines and spaces, line edge roughness (LER), and contact size variation measured using scanning electron microscopy (SEM). Mask properties such as surface roughness were used as metrics of the cleaning process effects. We also introduce a new method involving the correlation in LER of a single line from exposure to exposure at the same dose and focus. If mask cleaning were to introduce significant damage to either the capping layer or the absorber, we might expect an increase in LER correlation from exposure to exposure of the same feature, as uncorrelated effects due to the resist cause a second order change depending on aerial image contrast loss. We look at these metrics on the same mask used in previous cleans studies, now for a 50X and 75X cleans.

Paper Details

Date Published: 23 March 2012
PDF: 9 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83223C (23 March 2012); doi: 10.1117/12.918236
Show Author Affiliations
Brittany M. McClinton, Lawrence Berkeley National Lab. (United States)
Robert J. Chen, Intel Corp. (United States)
Simi A. George, Lawrence Berkeley National Lab. (United States)
Yongbae Kim, Intel Corp. (United States)
Lorie-Mae Baclea-an, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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