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Proceedings Paper

Accurate optical CD profiler based on specialized finite element method
Author(s): Jesus Carrero; Gökhan Perçin
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Paper Abstract

As the semiconductor industry is moving to very low-k1 patterning solutions, the metrology problems facing process engineers are becoming much more complex. Choosing the right optical critical dimension (OCD) metrology technique is essential for bridging the metrology gap and achieving the required manufacturing volume throughput. The critical dimension scanning electron microscope (CD-SEM) measurement is usually distorted by the high aspect ratio of the photoresist and hard mask layers. CD-SEM measurements cease to correlate with complex three-dimensional profiles, such as the cases for double patterning and FinFETs, thus necessitating sophisticated, accurate and fast computational methods to bridge the gap. In this work, a suite of computational methods that complement advanced OCD equipment, and enabling them to operate at higher accuracies, are developed. In this article, a novel method for accurately modeling OCD profiles is presented. A finite element formulation in primal form is used to discretize the equations. The implementation uses specialized finite element spaces to solve Maxwell equations in two dimensions.

Paper Details

Date Published: 5 April 2012
PDF: 7 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83240P (5 April 2012); doi: 10.1117/12.918055
Show Author Affiliations
Jesus Carrero, Luminescent Technologies, Inc. (United States)
Gökhan Perçin, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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