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Proceedings Paper

EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300
Author(s): T. Wallow; D. Civay; S. Wang; H. F. Hoefnagels; C. Verspaget; G. Tanriseven; A. Fumar-Pici; S. Hansen; J. Schefske; M. Singh; R. Maas; Y. van Dommelen; J. Mallman
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Paper Abstract

The major challenge for EUV resists at 22 nm half-pitch and below continues to be simultaneously achieving resolution, sensitivity, and line-width roughness (LWR) targets. An ongoing micro-exposure tool (MET) based evaluation of leading resists throughout 2011 shows that incremental progress toward meeting requirements continues apace, with best-of-breed candidates now capable of limiting 19 nm half-pitch resolution at sensitivities near or below 20 mJ/cm2 and LWR below 4 nm 3σ through process window. Evaluation of a selection of leading resists using an ASML NXE:3100 2nd generation full-field exposure tool demonstrates key performance improvements vs. the previous process-of- record (POR) setup resist including enhanced process window at 22 nm half-pitch and better contact hole uniformity. Champion limiting resolution performance for chemically amplified resists at a relaxed sensitivity specification has advanced to 16 nm half-pitch for both MET and full-field exposures.

Paper Details

Date Published: 23 March 2012
PDF: 12 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221J (23 March 2012); doi: 10.1117/12.918039
Show Author Affiliations
T. Wallow, GLOBALFOUNDRIES Inc. (United States)
D. Civay, GLOBALFOUNDRIES Inc. (United States)
S. Wang, ASML Netherlands B.V. (Netherlands)
H. F. Hoefnagels, ASML Netherlands B.V. (Netherlands)
C. Verspaget, ASML Netherlands B.V. (Netherlands)
G. Tanriseven, ASML Netherlands B.V. (Netherlands)
A. Fumar-Pici, ASML US, Inc. (United States)
S. Hansen, ASML US, Inc. (United States)
J. Schefske, GLOBALFOUNDRIES Inc. (Belgium)
M. Singh, GLOBALFOUNDRIES Inc. (Belgium)
R. Maas, ASML Netherlands B.V. (Netherlands)
Y. van Dommelen, ASML US, Inc. (United States)
J. Mallman, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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