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Proceedings Paper

Optimization method of photolithography process by means of atomic force microscopy
Author(s): Andrzej Sierakowski; Paweł Janus; Daniel Kopiec; Konrad Nieradka; Krzysztof Domanski; Piotr Grabiec; Teodor Gotszalk
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Paper Abstract

In this article authors present a method for determining optimal photoresist exposure parameters in a photolithography process by an analysis of a topographic profile of exposed images in a photoresist layer. As a measurement tool an Atomic Force Microscopy (AFM) integrated with a system for maskless lithography was used. The measurement system with the piezoresistive cantilever and experimental procedure was described. Initial experiments result of determining the optimal exposure energy and minimizing the stitching error method were presented.

Paper Details

Date Published: 17 April 2012
PDF: 8 pages
Proc. SPIE 8352, 28th European Mask and Lithography Conference, 83520B (17 April 2012); doi: 10.1117/12.918024
Show Author Affiliations
Andrzej Sierakowski, Institute of Electron Technology (Poland)
Paweł Janus, Institute of Electron Technology (Poland)
Daniel Kopiec, Wrocław Univ. of Technology (Poland)
Konrad Nieradka, Wrocław Univ. of Technology (Poland)
Krzysztof Domanski, Institute of Electron Technology (Poland)
Piotr Grabiec, Institute of Electron Technology (Poland)
Teodor Gotszalk, Wrocław Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8352:
28th European Mask and Lithography Conference
Uwe F.W. Behringer; Wilhelm Maurer, Editor(s)

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