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Proceedings Paper

KrF resists for implant layers patterning extreme high-aspect ratio structures with a double focal plane exposure technique
Author(s): Giorgio Rafaelli; Fabio Ferri; Stefano Volpi; Chisun Hong
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Paper Abstract

The design rules for advanced image sensor applications are requiring continuous CD shrinkage, and increasing aspect ratios which resulting in major challenges associated with using KrF technology. For the implant photo layers in particular, the need to block high-energy boron implants (well above 2 MeV) with extremely localized implant profiles requires an aspect ratio of deep well structures greater than 10:1. Other desirable attributes of a good photoresist for such demanding applications are high transparency, a steep wall profile consistent throughout the entire film, good adhesion with no structure collapse, and a wide process window. In this paper, we will discuss the role of a chemically amplified, ESCAP-type of resist in meeting these design criteria using a double focal plane exposure technique.

Paper Details

Date Published: 20 March 2012
PDF: 11 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83252D (20 March 2012); doi: 10.1117/12.918015
Show Author Affiliations
Giorgio Rafaelli, Micron Technology Italia S.r.l. (Italy)
Fabio Ferri, Micron Technology Italia S.r.l. (Italy)
Stefano Volpi, FUJIFILM Electronic Materials (Europe) S.r.l. (Italy)
Chisun Hong, FUJIFILM Electronic Materials U.S.A., Inc. (United States)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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