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Proceedings Paper

Low-voltage, high-extinction ratio carrier-depletion Mach-Zehnder silicon optical modulator
Author(s): Jianfeng Ding; Hongtao Chen; Ruiqiang Ji; Lin Yang; Yonghui Tian; Lei Zhang; Weiwei Zhu; Yangyang Lu; Rui Min; Ping Zhou
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Paper Abstract

As a result of the low modulation efficiency of carrier-depletion Mach-Zehnder silicon optical modulator, it always needs a high voltage around 6 V, which is very difficult to supply in an integrated high-speed CMOS chip. We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator which works at a low voltage. Its coplanar waveguide electrode is carefully designed to make sure the electrical wave loss along the device is low. The device operates well at a data rate of 12.5 Gb/s, whose phase-shifter length is 2 mm. Voltages with the swinging amplitudes being 1 V and 2 V are applied to the device with the reverse bias voltages of 0.5 V and 0.8 V. The extinction ratios are 7.67 and 12.79 dB respectively.

Paper Details

Date Published: 28 November 2011
PDF: 6 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081P (28 November 2011); doi: 10.1117/12.917997
Show Author Affiliations
Jianfeng Ding, Institute of Semiconductors (China)
Hongtao Chen, Institute of Semiconductors (China)
Ruiqiang Ji, Institute of Semiconductors (China)
Lin Yang, Institute of Semiconductors (China)
Yonghui Tian, Institute of Semiconductors (China)
Lei Zhang, Institute of Semiconductors (China)
Weiwei Zhu, Institute of Semiconductors (China)
Yangyang Lu, Institute of Semiconductors (China)
Rui Min, Institute of Semiconductors (China)
Ping Zhou, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)

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