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Proceedings Paper

Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells
Author(s): Yung-Chi Yao; Yi-Ching Chen; Ya-Ju Lee
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Paper Abstract

Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.

Paper Details

Date Published: 6 February 2012
PDF: 8 pages
Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82781T (6 February 2012); doi: 10.1117/12.917953
Show Author Affiliations
Yung-Chi Yao, National Taiwan Normal Univ. (Taiwan)
Yi-Ching Chen, National Taiwan Normal Univ. (Taiwan)
Ya-Ju Lee, National Taiwan Normal Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8278:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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