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Proceedings Paper

Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD
Author(s): Pengyu Wang; Qi Wang; Xin Guo; Zhigang Jia; Tianhe Li; Xiaomin Ren; Shiwei Cai
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Paper Abstract

We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs capped by an InGaAs strain-reducing layer wasn't obvious. However, when boron atoms were incorporated in InAs QDs capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga intermixing effects during capping coverage.

Paper Details

Date Published: 28 November 2011
PDF: 6 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83082C (28 November 2011); doi: 10.1117/12.917901
Show Author Affiliations
Pengyu Wang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Xin Guo, Beijing Univ. of Posts and Telecommunications (China)
Zhigang Jia, Beijing Univ. of Posts and Telecommunications (China)
Tianhe Li, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Shiwei Cai, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI

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