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Proceedings Paper

Apply low-temperature plasma in the rework procedure of Al film structure to prevent pattern collapsed and CuAl[sub]2[/sub] precipitation
Author(s): Jau Yu Tsai; Kung Hsun Tsao; Tsz Yuan Chen; Chih Chung Huang; Huan Hsin Yeh; Yu Huan Liu
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Paper Abstract

In a conventional lithography process with Al film structure, the photo resist pattern is removed by two methods: wet etch or wet etch combine with dry strip process. There were some problems in these kinds of processes. Pattern collapsed after wet etch process due to the photo resist (PR) adhesion capability reduced. Contact angle can be the index to measure the adhesion capability. So as to prevent the pattern collapsed issue, a high-temperature plasma treatment step was added after wet etch. But it induces another issue. IC devices fabrication in Al interconnect process, 0.5wt% Cu is generally used in Al film deposition for better Al electron migration performance. The high-temperature Plasma with high potentiality of CuAl2 precipitation, which will form a residue cause the metal line bridge induce yield loss. In this paper, we modify the rework procedure and lower the plasma processing temperature to the "room temperature" to prevent the pattern collapsed issue and the CuAl2 precipitation. The modified rework procedure is not only improved the defect, WAT and yield, but also reduce the cycle time of resist remove process.

Paper Details

Date Published: 5 April 2012
PDF: 8 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83243B (5 April 2012); doi: 10.1117/12.917888
Show Author Affiliations
Jau Yu Tsai, United Microelectronics Corp. (Taiwan)
Kung Hsun Tsao, United Microelectronics Corp. (Taiwan)
Tsz Yuan Chen, United Microelectronics Corp. (Taiwan)
Chih Chung Huang, United Microelectronics Corp. (Taiwan)
Huan Hsin Yeh, United Microelectronics Corp. (Taiwan)
Yu Huan Liu, United Microelectronics Corp. (Taiwan)


Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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