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Proceedings Paper

Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates
Author(s): James W. Thackeray; James F. Cameron; Michael Wagner; Suzanne Coley; Owendi Ongayi; Warren Montgomery; Dave Lovell; John Biafore; Vidhya Chakrapani; Akiteru Ko
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Paper Abstract

This paper will report on our development of low diffusion EUV resists based on polymer-bound PAG technology. With our low diffusion resist, a wide process window for 30-nm hp of 280nm DOF over a 10% exposure range is achieved on a prototype ADT fullfield scanner. Linewidth roughness of 3.1nm is also achieved. Excellent resist profiles can be achieved on organic ULs or Si hardmask materials. This resist also shows only 1.1 nm carbon growth on witness plate mirrors for cleanables, and no reflectivity loss after mirror cleaning. These results clearly pass for use on all NXE exposure tools. We also have shown good pattern transfer for a Si HM stack using this resist. Finally, we report 17-nm hp resolution at a dose of 14.5mj for a higher absorption resist.

Paper Details

Date Published: 20 March 2012
PDF: 11 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832508 (20 March 2012); doi: 10.1117/12.917807
Show Author Affiliations
James W. Thackeray, The Dow Chemical Co. (United States)
James F. Cameron, The Dow Chemical Co. (United States)
Michael Wagner, The Dow Chemical Co. (United States)
Suzanne Coley, The Dow Chemical Co. (United States)
Owendi Ongayi, The Dow Chemical Co. (United States)
Warren Montgomery, College of Nanoscale Science & Engineering, Univ. at Albany (United States)
Dave Lovell, College of Nanoscale Science & Engineering, Univ. at Albany (United States)
John Biafore, KLA-Tencor Corp. (United States)
Vidhya Chakrapani, Tokyo Electron Technology Ctr., America, LLC (United States)
Akiteru Ko, Tokyo Electron Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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