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Proceedings Paper

Calibration and verification of a stochastic model for EUV resist
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Paper Abstract

Line width roughness remains a critical issue when moving towards smaller feature sizes in EUV lithography. We present a stochastic resist modeling approach to accurately predict LWR and CD simultaneously. The stochastic model simulates the roughness effects due to the shot noise and secondary electron effects during exposure, and the interaction amongst the finite number of chemical molecules (inhibitor, PAG, quencher) during PEB. The model calibration used the imec baseline EUV resist (Shinetsu SEVR140) with over 250 measured CDs and corresponding line width roughness data. The validation was performed with 1D and 2D patterns. Especially for contact holes the predictability regarding local CD uniformity is discussed. The good match between the simulations and wafer results for SRAM patterns further exhibits the predictive power of the model. The model has been applied to simulate the new ASML NXE: 3100 EUV conditions for both thin and thick absorber EUV masks. The comparison between the simulation results and wafer data are reported.

Paper Details

Date Published: 23 March 2012
PDF: 10 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221D (23 March 2012); doi: 10.1117/12.917804
Show Author Affiliations
Weimin Gao, Synopsys Inc. (Belgium)
IMEC (Belgium)
Alexander Philippou, Synopsys GmbH (Germany)
Ulrich Klostermann, Synopsys GmbH (Germany)
Joachim Siebert, Synopsys GmbH (Germany)
Vicky Philipsen, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)
Tom Vandeweyer, IMEC (Belgium)
Gian Lorusso, IMEC (Belgium)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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