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Proceedings Paper

Defect distribution study at through silicon via (TSV) bottom by scanning white-light interference microscopy
Author(s): Jeongho Ahn; Jaeyoung Park; Dongchul Ihm; Byoungho Lee; Soobok Chin; Ho-Kyu Kang; Jiyoung Noh; Peter Ko; Timothy A. Johnson; Namki Suk
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Paper Abstract

Distributions of via Depth and bottom CD for TSV wafer have been studied by scanning interference microscopy (Unifire 7900, Nanometrics Inc.). We plotted whole wafer maps for each via depth and bottom CD and found useful relationship between them (i.e. via depth is in inverse proportion to bottom CD in general). Average values of via depth and bottom CD are ~60um and ~4um and their standard deviation values are 1.28% and 5.14% respectively. We also demonstrated kinds of defects at via top (or bottom) which can cause disturbance of total via count during 3D inspection. Our results can be a good introduction to scanning interference tool as a monitoring tool for TSV high volume manufacturing.

Paper Details

Date Published: 3 April 2012
PDF: 6 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83241U (3 April 2012); doi: 10.1117/12.917797
Show Author Affiliations
Jeongho Ahn, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jaeyoung Park, Nanometrics Korea Ltd. (Korea, Republic of)
Dongchul Ihm, Samsung Electronics Co., Ltd. (Korea, Republic of)
Byoungho Lee, Samsung Electronics Co., Ltd. (Korea, Republic of)
Soobok Chin, Samsung Electronics Co., Ltd. (Korea, Republic of)
Ho-Kyu Kang, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jiyoung Noh, Nanometrics Korea Ltd. (Korea, Republic of)
Peter Ko, Nanometrics Inc. (United States)
Timothy A. Johnson, Nanometrics Inc. (United States)
Namki Suk, Nanometrics Korea Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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