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Proceedings Paper

Mask shadowing and the line-edge transfer function
Author(s): Brittany M. McClinton; Thomas Wallow; Patrick P. Naulleau
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Paper Abstract

Owing to the mask-side non-telecentricity resulting from the reflective nature of extreme ultraviolet lithography (EUVL), mask shadowing is well-known to be an issue for EUVL. The shadowing problem is also expected to become more severe as numerical apertures are increased in the future and even larger mask illumination angles are needed. Although the shadowing problem in general has been well studied, the impact this effect might have on the transfer of line-edge roughness (LER) from the mask to the wafer has not been studied. Here we extend previous efforts in the analysis of the LER transfer function (LTF) to explicitly include 3D mask effects. We show that the LTF differs for the shadowed and non-shadowed directions: moreover, the LTF of the left-side edge differs from the right-side edge in the shadowed direction. Finally, we also observe a breakdown of the linearity of the LTF for shadowed features.

Paper Details

Date Published: 23 March 2012
PDF: 8 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832221 (23 March 2012); doi: 10.1117/12.917790
Show Author Affiliations
Brittany M. McClinton, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Thomas Wallow, GLOBALFOUNDRIES Inc. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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