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Proceedings Paper

The validity of a simplified model for mask roughness induced LER under off-axis illumination with dense and isolated lines
Author(s): Brittany M. McClinton; Patrick P. Naulleau
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Paper Abstract

As the total line-edge roughness (LER) budget nears the single nanometer regime for future nodes, the employment of extreme ultraviolet lithography (EUVL) must take into account every LER contribution, including that due to the resist, the mask, and mask surface roughness. While much effort has gone into predicting resist LER and mask LER allowances, contributions due to mask roughness induced LER have just recently garnered attention. As the LER contribution due to mask surface roughness can very easily be on the order of several nanometers for out of focus conditions, it is important to have a means to predict it with ease as a function of NA, illumination type, defocus, feature size, and mask roughness properties. Recently, a new simplified model has been proposed for faster modeling and prediction of mask roughness induced LER based on those parameters. We extend that work and verify the validity of this simplified model across the gamut: from conventional disk-type illumination to off-axis illumination configurations, from dense lines and spaces to isolated ones, down to the 16-nm half pitch, and all through focus.

Paper Details

Date Published: 23 March 2012
PDF: 9 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221Z (23 March 2012); doi: 10.1117/12.917787
Show Author Affiliations
Brittany M. McClinton, Univ. of California, Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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