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Proceedings Paper

Using the transport of intensity equation to predict mask-induced speckle through focus
Author(s): Brittany M. McClinton; Patrick P. Naulleau
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Paper Abstract

The shrinking critical dimensions in the semiconductor industry carries with it simultaneous shrinking requirements on line-edge roughness (LER). With the employment of extreme ultraviolet lithography (EUVL), a significant new contributor to LER is apparent in the form of mask roughness induced LER. Several simplified models have been developed for the prediction of mask roughness induced LER. Currently, these models use 2D aerial image thin-mask modeling through focus to obtain the clearfield speckle pattern (dependent on mask surface roughness and illumination), and combine that with fast 1D aerial image modeling of the image-log-slope (ILS) (dependent on feature type and illumination) to predict the overall mask roughness induced LER. We propose a further simplification and speed enhancement by employing the transport of intensity equation to predict how the speckle pattern will evolve through focus starting from the single 2D aerial image of the speckle at the image-plane.

Paper Details

Date Published: 22 March 2012
PDF: 13 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220P (22 March 2012); doi: 10.1117/12.917785
Show Author Affiliations
Brittany M. McClinton, Univ. of California, Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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