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Proceedings Paper

Self-aligned double patterning (SADP) compliant design flow
Author(s): Yuangsheng Ma; Jason Sweis; Hidekazu Yoshida; Yan Wang; Jongwook Kye; Harry J. Levinson
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Paper Abstract

Double patterning with 193nm optical lithography is inevitable for technology scaling before EUV is ready. In general, there are two major double patterning techniques (DPT): Litho-Etch-Litho-Etch (LELE) and sidewall spacer technology, a Self-Aligned Double Patterning technique (SADP). So far LELE is much more mature than SADP in terms of process development and design flow implementation. However, SADP has stronger scaling potential than LELE due to its smaller design rules on tip-tip and tip-side as well as its intrinsic self-align property. In this paper, we will explain in detail about how to enable a SADP-friendly design flow from multiple perspectives: design constructs, design rules, standard cell library and routing. In addition, the differences between SADP and LELE in terms of design, scaling capability and RC performance will be addressed.

Paper Details

Date Published: 14 March 2012
PDF: 13 pages
Proc. SPIE 8327, Design for Manufacturability through Design-Process Integration VI, 832706 (14 March 2012); doi: 10.1117/12.917775
Show Author Affiliations
Yuangsheng Ma, GLOBALFOUNDRIES Inc. (United States)
Jason Sweis, Cadence Design Systems, Inc. (United States)
Hidekazu Yoshida, GLOBALFOUNDRIES Inc. (United States)
Yan Wang, GLOBALFOUNDRIES Inc. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 8327:
Design for Manufacturability through Design-Process Integration VI
Mark E. Mason, Editor(s)

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