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Proceedings Paper

Development of EUV lithography tool technologies at Nikon
Author(s): Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Hiroshi Chiba; Yoshio Kawabe; Takuro Ono; Noriaki Kandaka; Atsushi Yamazaki; Takashi Yamaguchi; Ryo Shibata; Masayuki Shiraishi
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Paper Abstract

6-mirror-system EUV projection optics design with NA of 0.4 plus was improved and the residual wavefront error was much reduced. Apodization is an issue for such high-NA EUV projection optics. Broad-band multilayer mirror can solve the problem. Broad-band multilayer mirrors were developed. Measured reflectivity performance of these multilayers was in good agreement with the designed performance. We have decided the measures to control contaminations of optics in HVM EUV exposure tools.

Paper Details

Date Published: 23 March 2012
PDF: 9 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832215 (23 March 2012); doi: 10.1117/12.917676
Show Author Affiliations
Katsuhiko Murakami, Nikon Corp. (Japan)
Tetsuya Oshino, Nikon Corp. (Japan)
Hiroyuki Kondo, Nikon Corp. (Japan)
Hiroshi Chiba, Nikon Corp. (Japan)
Yoshio Kawabe, Nikon Corp. (Japan)
Takuro Ono, Nikon Corp. (Japan)
Noriaki Kandaka, Nikon Corp. (Japan)
Atsushi Yamazaki, Nikon Corp. (Japan)
Takashi Yamaguchi, Nikon Corp. (Japan)
Ryo Shibata, Nikon Corp. (Japan)
Masayuki Shiraishi, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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