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Proceedings Paper

The effect of growth temperature on InAs quantum dots grown by MOCVD
Author(s): Tianhe Li; Xin Guo; Qi Wang; Pengyu Wang; Zhigang Jia; Xiaomin Ren; Yongqing Huang; Shiwei Cai
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Paper Abstract

The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2×1010cm-2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.

Paper Details

Date Published: 28 November 2011
PDF: 7 pages
Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83082B (28 November 2011); doi: 10.1117/12.917614
Show Author Affiliations
Tianhe Li, Beijing Univ. of Posts and Telecommunications (China)
Xin Guo, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Pengyu Wang, Beijing Univ. of Posts and Telecommunications (China)
Zhigang Jia, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Shiwei Cai, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8308:
Optoelectronic Materials and Devices VI
Guang-Hua Duan, Editor(s)

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