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Proceedings Paper

Assessment of negative tone development challenges
Author(s): Sohan Singh Mehta; Yongan Xu; Guillaume Landie; Vikrant Chauhan; Sean D. Burns; Peggy Lawson; Bassem Hamieh; Jerome Wandell; Martin Glodde; Yu Yang Sun; Mark Kelling; Alan Thomas; Jeong Soo Kim; James Chen; Hirokazu Kato; Chiahsun Tseng; Chiew-Seng Koay; Yoshinori Matsui; Martin Burkhardt; Yunpeng Yin; David Horak; Shyng-Tsong Chen; Yann Mignot; Yannick Loquet; Matthew Colburn; John Arnold; Terry Spooner; Lior Huli; Dave Hetzer; Jason Cantone; Shinichiro Kawakami; Shannon Dunn
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Paper Abstract

The objective of this work is to describe the advances in 193nm photoresists using negative tone developer and key challenges associated with 20nm and beyond technology nodes. Unlike positive tone resists which use protected polymer as the etch block, negative tone developer resists must adhere to a substrate with a deprotected polymer matrix; this poses adhesion and bonding challenges for this new patterning technology. This problem can be addressed when these photo resists are coated on anti-reflective coatings with plentiful silicon in them (SiARC), which are specifically tailored for compatibility with the solvent developing resist. We characterized these modified SiARC materials and found improvement in pattern collapse thru-pitches down to 100nm. Fundamental studies were carried out to understand the interactions between the resist materials and the developers. Different types of developers were evaluated and the best candidate was down selected for contact holes and line space applications. The negative tone developer proximity behavior has been investigated through optical proximity correction (OPC) verification. The defectivity through wafer has been driven down from over 1000 adders/wafer to less than 100 adders/wafer by optimizing the develop process. Electric yield test has been conducted and compared between positive tone and negative tone developer strategies. In addition, we have done extensive experimental work to reduce negative tone developer volume per wafer to bring cost of ownership (CoO) to a value that is equal or even lower than that of positive tone CoO.

Paper Details

Date Published: 20 March 2012
PDF: 15 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832506 (20 March 2012); doi: 10.1117/12.917560
Show Author Affiliations
Sohan Singh Mehta, GLOBALFOUNDRIES Inc. (United States)
Yongan Xu, IBM Corp. (United States)
Guillaume Landie, STMicroelectronics (United States)
Vikrant Chauhan, GLOBALFOUNDRIES Inc. (United States)
Sean D. Burns, IBM Corp. (United States)
Peggy Lawson, IBM Corp. (United States)
Bassem Hamieh, STMicroelectronics (United States)
Jerome Wandell, GLOBALFOUNDRIES Inc. (United States)
Martin Glodde, IBM Corp. (United States)
Yu Yang Sun, GLOBALFOUNDRIES Inc. (United States)
Mark Kelling, GLOBALFOUNDRIES Inc. (United States)
Alan Thomas, IBM Corp. (United States)
Jeong Soo Kim, GLOBALFOUNDRIES Inc. (United States)
James Chen, IBM Corp. (United States)
Hirokazu Kato, Toshiba America Electronic Components, Inc. (United States)
Chiahsun Tseng, IBM Corp. (United States)
Chiew-Seng Koay, IBM Corp. (United States)
Yoshinori Matsui, Renesas (United States)
Martin Burkhardt, IBM Corp. (United States)
Yunpeng Yin, IBM Corp. (United States)
David Horak, IBM Corp. (United States)
Shyng-Tsong Chen, IBM Corp. (United States)
Yann Mignot, STMicroelectronics (United States)
Yannick Loquet, STMicroelectronics (United States)
Matthew Colburn, IBM Corp. (United States)
John Arnold, IBM Corp. (United States)
Terry Spooner, IBM Corp. (United States)
Lior Huli, Tokyo Electron Technology Ctr., America, LLC (United States)
Dave Hetzer, Tokyo Electron Technology Ctr., America, LLC (United States)
Jason Cantone, GLOBALFOUNDRIES Inc (United States)
Shinichiro Kawakami, Tokyo Electron Technology Ctr., America, LLC (United States)
Shannon Dunn, Tokyo Electron Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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