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Proceedings Paper

A comparison of alignment and overlay performance with varying hardmask materials
Author(s): Sangho Yun; Soon Mok Ha; Young Min Nam; Cheol-Hong Kim; Suk-Woo Nam
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Paper Abstract

In recent semiconductor manufacturing, hardmask is unavoidable requirement to further transfer the patterning from thin photoresist to underlayer. While several types of hardmask materials have been investigated, amorphous carbon has been attractive for good etching resistance and high-aspect-ratio resolution. However, it has fatal problem with lowering overlay controllability due to its high extinction coefficient (k). Thus, the correlation of alignment and overlay performance with varying hardmask materials is required to meet a tight overlay budget of 2x nm node and beyond. In this paper, we have investigated the effects of the hardmask materials with respect to the optical properties on the performance of overlay applicable to 2x nm memory devices.

Paper Details

Date Published: 4 April 2012
PDF: 9 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832407 (4 April 2012); doi: 10.1117/12.917412
Show Author Affiliations
Sangho Yun, Samsung Electronics Co., Ltd. (Korea, Republic of)
Soon Mok Ha, Samsung Electronics Co., Ltd. (Korea, Republic of)
Young Min Nam, Samsung Electronics Co., Ltd. (Korea, Republic of)
Cheol-Hong Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Suk-Woo Nam, Samsung Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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