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Proceedings Paper

The development of a fast physical photoresist model for OPE and SMO applications from an optical engineering perspective
Author(s): Donis Flagello; Ryota Matsui; Kazuhiro Yano; Tomoyuki Matsuyama
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Paper Abstract

This work describes a new photoresist imaging model that retains the fundamental physical and chemical properties of optical exposure, post-exposure bake and development. We apply dimensional reduction algorithms that reduce the imaging aspects of the problem, but preserve the imaging and thin film physics. This has the effect of simplifying the overall model and increasing the computational speed, while retaining an extremely accurate predictive capability. The model named the RoadRunner Model, gives more detail and parameter intuition than a basic threshold model and agrees well with full photoresist simulation. The model can be adapted for OPE analysis and source-mask optimization. We present an adaption of the model to incorporate relevant stochastic processes, and we discuss its use in applications such line wide roughness analysis and EUV imaging.

Paper Details

Date Published: 13 March 2012
PDF: 13 pages
Proc. SPIE 8326, Optical Microlithography XXV, 83260R (13 March 2012); doi: 10.1117/12.917030
Show Author Affiliations
Donis Flagello, Nikon Research Corp. of America (United States)
Ryota Matsui, Nikon Corp. (Japan)
Kazuhiro Yano, Nikon Corp. (Japan)
Tomoyuki Matsuyama, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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