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Proceedings Paper

Modeling the effects of acid amplifiers on photoresist stochastics
Author(s): Gregg M. Gallatin; Patrick P. Naulleau; Robert L. Brainard
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Paper Abstract

The tradeo between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeo, continues to be a dicult challenge, especially for EUV lithography. Acid ampliers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplication. Using this model the impact acid ampliers have on the RLS tradeo is studied under a variety of resist conditions.

Paper Details

Date Published: 23 March 2012
PDF: 9 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221C (23 March 2012); doi: 10.1117/12.917006
Show Author Affiliations
Gregg M. Gallatin, National Institute of Standards and Technology (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Robert L. Brainard, Univ. at Albany (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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